TMDsベーサル面の単位面積あたりのカルコゲン原子数・空孔数

Formulas and Worked Examples for 2H‑MoS₂, MoSe₂, WS₂

Formulate how basal‑plane area, chalcogen‑site count, and vacancy statistics are related in 2H‑type transition‑metal dichalcogenide monolayers. We derive general equations for chalcogen atoms vs area, then work through concrete examples for MoS₂, MoSe₂, and WS₂ useful to graduate‑level researchers.

1. はじめに

モノレイヤー 2H‑TMD (MX₂, M = Mo/W, X = S/Se) では、ベーサル面 …